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Abstract This paper presents a study of the inclusive forward J/ψyield as a function of forward charged-particle multiplicity in pp collisions at$$ \sqrt{s} $$ = 13 TeV using data collected by the ALICE experiment at the CERN LHC. The results are presented in terms of relativeJ/ψyields and relative charged-particle multiplicities with respect to these quantities obtained in inelastic collisions having at least one charged particle in the pseudorapidity range |η|<1. The J/ψmesons are reconstructed via their decay intoμ+μ−pairs in the forward rapidity region (2.5< y <4). The relative multiplicity is estimated in the forward pseudorapidity range which overlaps with the J/ψrapidity region. The results show a steeper-than-linear increase of the J/ψyields versus the multiplicity. They are compared with previous measurements and theoretical model calculations.more » « lessFree, publicly-accessible full text available July 1, 2026
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Spin-orbit coupling (SOC), the interaction between the electron spin and the orbital angular momentum, can unlock rich phenomena at interfaces, in particular interconverting spin and charge currents. Conventional heavy metals have been extensively explored due to their strong SOC of conduction electrons. However, spin-orbit effects in classes of materials such as epitaxial 5 d -electron transition-metal complex oxides, which also host strong SOC, remain largely unreported. In addition to strong SOC, these complex oxides can also provide the additional tuning knob of epitaxy to control the electronic structure and the engineering of spin-to-charge conversion by crystalline symmetry. Here, we demonstrate room-temperature generation of spin-orbit torque on a ferromagnet with extremely high efficiency via the spin-Hall effect in epitaxial metastable perovskite SrIrO 3 . We first predict a large intrinsic spin-Hall conductivity in orthorhombic bulk SrIrO 3 arising from the Berry curvature in the electronic band structure. By manipulating the intricate interplay between SOC and crystalline symmetry, we control the spin-Hall torque ratio by engineering the tilt of the corner-sharing oxygen octahedra in perovskite SrIrO 3 through epitaxial strain. This allows the presence of an anisotropic spin-Hall effect due to a characteristic structural anisotropy in SrIrO 3 with orthorhombic symmetry. Our experimental findings demonstrate the heteroepitaxial symmetry design approach to engineer spin-orbit effects. We therefore anticipate that these epitaxial 5 d transition-metal oxide thin films can be an ideal building block for low-power spintronics.more » « less
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A<sc>bstract</sc> Differential cross sections for top quark pair ($$ \textrm{t}\overline{\textrm{t}} $$ ) production are measured in proton-proton collisions at a center-of-mass energy of 13 TeV using a sample of events containing two oppositely charged leptons. The data were recorded with the CMS detector at the CERN Large Hadron Collider and correspond to an integrated luminosity of 138 fb−1. The differential cross sections are measured as functions of kinematic observables of the$$ \textrm{t}\overline{\textrm{t}} $$ system, the top quark and antiquark and their decay products, as well as of the number of additional jets in the event. The results are presented as functions of up to three variables and are corrected to the parton and particle levels. When compared to standard model predictions based on quantum chromodynamics at different levels of accuracy, it is found that the calculations do not always describe the observed data. The deviations are found to be largest for the multi-differential cross sections.more » « lessFree, publicly-accessible full text available February 1, 2026
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A<sc>bstract</sc> A search is presented for the resonant production of a pair of standard model-like Higgs bosons using data from proton-proton collisions at a centre-of-mass energy of 13 TeV, collected by the CMS experiment at the CERN LHC in 2016–2018, corresponding to an integrated luminosity of 138 fb−1. The final state consists of two b quark-antiquark pairs. The search is conducted in the region of phase space where at least one of the pairs is highly Lorentz-boosted and is reconstructed as a single large-area jet. The other pair may be either similarly merged or resolved, the latter reconstructed using two b-tagged jets. The data are found to be consistent with standard model processes and are interpreted as 95% confidence level upper limits on the product of the cross sections and the branching fractions of the spin-0 radion and the spin-2 bulk graviton that arise in warped extradimensional models. The limits set are in the range 9.74–0.29 fb and 4.94–0.19 fb for a narrow radion and a graviton, respectively, with masses between 1 and 3 TeV. For a radion and for a bulk graviton with widths 10% of their masses, the limits are in the range 12.5–0.35 fb and 8.23–0.23 fb, respectively, for the same masses. These limits result in the exclusion of a narrow-width graviton with a mass below 1.2 TeV, and of narrow and 10%-width radions with masses below 2.6, and 2.9 TeV, respectively.more » « lessFree, publicly-accessible full text available February 1, 2026
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The metal-insulator transition in correlated materials is usually coupled to a symmetry-lowering structural phase transition. This coupling not only complicates the understanding of the basic mechanism of this phenomenon but also limits the speed and endurance of prospective electronic devices. We demonstrate an isostructural, purely electronically driven metal-insulator transition in epitaxial heterostructures of an archetypal correlated material, vanadium dioxide. A combination of thin-film synthesis, structural and electrical characterizations, and theoretical modeling reveals that an interface interaction suppresses the electronic correlations without changing the crystal structure in this otherwise correlated insulator. This interaction stabilizes a nonequilibrium metallic phase and leads to an isostructural metal-insulator transition. This discovery will provide insights into phase transitions of correlated materials and may aid the design of device functionalities.more » « less
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